射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 100W 50V ISM
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.2...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 ...
射频放大器 Airfast RF LDMOS Wideband Integrated Power Amplifier, 978-1090 MHz, 250 W ...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 38...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AF 1.8-2.7G 15W TO270-2
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1...
开发板和工具包 - ARM i.MX 6SoloX SABRE Dev Board
射频金属氧化物半导体场效应(RF MOSFET)晶体管 AF 1.8-2.7G 15W TO270-2G
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 600 W CW over 1....
射频放大器 978-1090 MHz, 250 W Peak, 50 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 700 W Pulse over ...
子卡和OEM板 Surface Mount to DIP Evaluation Board
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 250W 50V NI780HS
射频放大器 Airfast RF LDMOS Wideband Integrated Power Amplifier, 1400-2200 MHz, 5.0 W...
射频放大器 Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-1300 MHz, 4 W AV...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 800MHZ13.6V