射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 55W 12.5V TO270WB4
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600...
NXP Semiconductors 8-channel ultra-low voltage, Fm+ I2C-bus switch with reset
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 ...
射频放大器 Airfast RF LDMOS Wideband Integrated Power Amplifiers 1800-2200MHz, 2.5 W ...
射频放大器 Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50...
射频开发工具 MRF300AN-40MHZ
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 30...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8--600 MHz 150 W CW 50 V
NFC/RFID标签和应答器 J3R150P9U15/0ZA1F8P
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600...
射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 1KW 50V NI1230H
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8--600 MHz 300 W CW 50 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 1.8-600 MHz 1250 W CW 50 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MOSFET 965-1215 MHz 1000 W 50 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 ...